Evaluation of Losses in HID Electronic Ballast Using Silicon Carbide MOSFETs

HID lamps are used in applications where high luminous intensity is desired. They are used in a wide range of applications from gymnasiums to movie theatres, from parking lots to indoor aquaria, from vehicle headlights to indoor gardening. They require ballasts during start-up and also during operation to regulate the voltage and current levels. Electronic ballasts have advantages of less weight, smooth operation, and less noisy over electromagnetic ballasts. A number of topologies are available for the electronic ballast where control of power electronic devices is exploited to achieve the performance of a ballast for lighting. A typical electronic ballast consists of a rectifier, power factor control unit, and the resonant converter unit. Power factor correction (PFC) was achieved using a boost converter topology and average current mode control for gate control of the boost MOSFET operating at a frequency of 70 kHz. The PFC was tested with Si and SiC MOSFET at 250 W resistive load for varying input from 90 V to 264 V. An efficiency as high as 97.4% was achieved by Si MOSFET based PFC unit. However, for SiC MOSFET, the efficiency decreased and was lower than expected. A maximum efficiency of 97.2% was achieved with the SiC based PFC. A simulation model was developed for both Si and SiC MOSFET based ballasts. The efficiency plots are presented. A faster gate drive for SiC MOSFET could improve the efficiency of the SiC based systems

Lifetime Estimation of IGBTs in a Grid-connected STATCOM

Lifetime estimation of power semiconductor devices, and IGBT devices in particular, used in the power electronics integrated with power systems has gained technical importance in recent times with increased scope of distributed generation, renewable energy systems and FACTS. Since most of the common failures (wire bond and solder fatigue) are caused by thermo-mechanical stresses, the methodology of lifetime estimation starts with temperature estimation, cycle counting based on rainflow algorithm, and finally degradation calculation based on linear accumulation model. Different number of RC cells for each packaging layer in the module for the thermal model, including the influence of encapsulant is proposed for temperature estimation of IGBTs in power modules. A modified rainflow algorithm with faster execution time and time dependent temperature calculation is introduced for cycle counting. Finally, the lifetime of the IGBT is estimated during STATCOM operation using real-time load profiles for power factor variation. For a power factor variation data for a building, the lifetime is estimated to be about 3 years. Similarly, a month long arc furnace load data is considered to compare the equivalent temperature based calculation to conventional tests. 4% more degradation is observed in the equivalent temperature based calculation than compared with conventional rainflow algorithm. A simulation study on the operation parameter dependence on the stresses in a wire is considered to estimate lifetime from Finite Element Analysis (FEA) in COMSOL. Power cycling tests are conducted on two different modules (600 V, 50 A H-bridge module and a 1200 V, 150 A phase leg module) to validate the lifetime model for four months. The low power module was tested without any protection circuits and hence failed catastrophically. Wire melt-off or fusing failure was dominantly observed, following by dielectric based short circuit failure. The high power module was tested with protection circuits to prevent catastrophic damage for a maximum of 4 months. A maximum of 20% degradation in static characteristics, with decreased on state resistance was observed in the modules. The degradation is attributed to increased junction temperature as the thermal resistance increases owing to solder fatigue